1.55μm laser diode monolithically integrated with spot-size converter using conventional process

Hou, L. , Wang, W. and Zhu, H. (2005) 1.55μm laser diode monolithically integrated with spot-size converter using conventional process. Chinese Journal of Semiconductors, 26(3), pp. 443-447.

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Abstract

A novel 1.55μm laser diode with spot-size converter is designed and fabricated using conventional photolithography and chemical wet etching process.For the laser diode,a ridge double-core structure is employed.For the spot-size converter,a buried ridge double-core structure is incorporated.The laterally tapered active core is designed and optically combined with the thin and wide passive core to control the size of mode.The laser diode threshold current is measured to be 40mA together with high slop efficiency of 0.35W/A.The beam divergence angles in the horizontal and vertical directions are as small as 14.89°×18.18°,respectively,resulting in low-coupling losses with a cleaved optical fiber (3dB loss).

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Hou, Dr Lianping
Authors: Hou, L., Wang, W., and Zhu, H.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Chinese Journal of Semiconductors
Publisher:Chinese Institute of Electronics
ISSN:0253-417

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