Characterization of Al2O3 and HfO2 Grown on Metal Surfaces with Thermal and Plasma Enhanced Atomic Layer Deposition

Zhou, H., Fu, Y.-C. and Mirza, M. (2017) Characterization of Al2O3 and HfO2 Grown on Metal Surfaces with Thermal and Plasma Enhanced Atomic Layer Deposition. AVS 17th International Conference on Atomic Layer Deposition (ALD 2017) featuring the 4th International Atomic Layer Etching Workshop (ALE 2017), Denver, CO, USA, 15-18 Jul 2017.

Abstract

Atomic layer deposition (ALD) is potentially a very suitable deposition technology to grow ultra thin films with excellent thickness control, good conformity on high aspect ratio structures, and less defects. Al2O3 and HfO2 are well-established high-k materials to replace SiO2 in transistor and capacitor applications. To grow high quality ALD films with low leakage current, high breakdown electric field and dielectric constant, it is important to understand the impact of both plasma enhanced ALD (PEALD) with O2-plasma and thermal ALD with H2O on the interface between ALD film and substrate surface, and also the impact of the interface on the quality of ALD films. We present the electrical and chemical characterizations of Al2O3 and HfO2 films directly grown on Au, Ti and TiN surfaces. Metal Insulator Metal (MIM) capacitors with 10nm of Al2O3 or 10nm of HfO2 as a dielectric layer were realized.

• Item Type: Conference or Workshop Item
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Mirza, Dr Muhammad M A and Zhou, Dr Haiping and Fu, Mr Yen-Chun
• Authors: Zhou, H., Fu, Y.-C., and Mirza, M.
• Subjects: Q Science > QC Physics
• College/School: College of Science and Engineering > School of Engineering; College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Research Group: American Vacuum Society
• Copyright Holders: Copyright © 2017 The Authors
• Publisher Policy: Reproduced with the permission of the Author

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