One dimensional transport in silicon nanowire junction-less field effect transistors

Mirza, M. M. , Schupp, F. J., Mol, J. A., MacLaren, D. A. , Briggs, G. A. D. and Paul, D. J. (2017) One dimensional transport in silicon nanowire junction-less field effect transistors. Scientific Reports, 7, 3004. (doi: 10.1038/s41598-017-03138-5) (PMID:28592820) (PMCID:PMC5462787)

Abstract

Junction-less nanowire transistors are being investigated to solve short channel effects in future CMOS technology. Here we demonstrate 8 nm diameter silicon nanowire junction-less transistors with metallic doping densities which demonstrate clear 1D electronic transport characteristics. The 1D regime allows excellent gate modulation with near ideal subthreshold slopes, on- to off-current ratios above 108 and high on-currents at room temperature. Universal conductance scaling as a function of voltage and temperature similar to previous reports of Luttinger liquids and Coulomb gap behaviour at low temperatures suggests that many body effects including electron-electron interactions are important in describing the electronic transport. This suggests that modelling of such nanowire devices will require 1D models which include many body interactions to accurately simulate the electronic transport to optimise the technology but also suggest that 1D effects could be used to enhance future transistor performance.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Mirza, Dr Muhammad M A and MacLaren, Dr Donald and Paul, Professor Douglas
• Authors: Mirza, M. M., Schupp, F. J., Mol, J. A., MacLaren, D. A., Briggs, G. A. D., and Paul, D. J.
• Subjects: Q Science > QC Physics
• College/School: College of Science and Engineering > School of Engineering; College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering; College of Science and Engineering > School of Physics and Astronomy
• Journal Name: Scientific Reports
• Publisher: Nature Publishing Group
• ISSN: 2045-2322
• ISSN (Online): 2045-2322
• Copyright Holders: Copyright © 2017 The Authors
• First Published: First published in Scientific Reports 7: 3004
• Publisher Policy: Reproduced under a Creative Commons License

Project Code	Award No	Project Name	Principal Investigator	Funder's Name	Funder Ref	Lead Dept
50329	1	Molecular-Metal-Oxide-nanoelectronicS (M-MOS): Achieving the Molecular Limit	Leroy Cronin	Engineering and Physical Sciences Research Council (EPSRC)	EP/H024107/1	CHEM - CHEMISTRY
69430	1	Engineering Quantum Technology Systems on a Silicon Platform	Douglas Paul	Engineering & Physical Sciences Research Council (EPSRC)	EP/N003225/1	ENG - ENGINEERING ELECTRONICS & NANO ENG