Gallium Nitride Super-Luminescent Light Emitting Diodes for Optical Coherence Tomography Applications

Goldberg, G. R., Ivanov, P., Ozaki, N., Childs, D. T.D. , Groom, K. M., Kennedy, K. L. and Hogg, R. A. (2016) Gallium Nitride Super-Luminescent Light Emitting Diodes for Optical Coherence Tomography Applications. In: 2016 International Semiconductor Laser Conference (ISLC), Kobe, Japan, 12-15 Sep 2016, ISBN 9784885523069

Abstract

The role of biasing of absorber sections in multi-contact GaN ~400nm SLEDs is discussed. We go on to assess such devices for OCT applications. Analysis of the SLED emission spectrum allows an axial resolution of 6.0μm to be deduced in OCT applications.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Ivanov, Dr Pavlo and Goldberg, Graham and Hogg, Professor Richard and Childs, Dr David
• Authors: Goldberg, G. R., Ivanov, P., Ozaki, N., Childs, D. T.D., Groom, K. M., Kennedy, K. L., and Hogg, R. A.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• ISSN: 1947-6981
• ISBN: 9784885523069
• Published Online: 05 December 2016
• Copyright Holders: Copyright © 2016 IEICE
• First Published: First published in 2016 International Semiconductor Laser Conference (ISLC)
• Publisher Policy: Reproduced in accordance with the publisher copyright policy