G-Band MMIC Resonant Tunneling Diode Oscillators

Wang, J., Al-Khalidi, A. , Alharbi, K., Ofiare, A., Zhou, H. and Wasige, E. (2016) G-Band MMIC Resonant Tunneling Diode Oscillators. In: 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), Toyama, Japan, 26-30 Jun 2016, ISBN 9781509019649 (doi: 10.1109/ICIPRM.2016.7528736)

137392.pdf - Accepted Version



This paper presents a G-band (140 -220 GHz) monolithic microwave/ (millimeter-wave) integrated circuit (MMIC) resonant tunneling diode (RTD) oscillator operating at 205.8 GHz with -14.6 dBm output power. The circuit topology employs two InGaAs/AlAs RTDs in parallel. A new RTD epi-layer material design which will greatly benefit micrometer-sized RTD devices for high output power of millimeterwave oscillators is also presented. It is expected that the oscillator output power will reach several mW for RTD oscillators operating in the G-band. This work shows the promising potential of RTD oscillators as terahertz (THz) sources for a variety of applications including high speed wireless communication.

Item Type:Conference Proceedings
Glasgow Author(s) Enlighten ID:Wasige, Professor Edward and Zhou, Dr Haiping and Wang, Dr Jue and Ofiare, Dr Afesomeh and Al-Khalidi, Dr Abdullah
Authors: Wang, J., Al-Khalidi, A., Alharbi, K., Ofiare, A., Zhou, H., and Wasige, E.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Published Online:04 August 2016
Copyright Holders:Copyright © 2017 IEEE
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

University Staff: Request a correction | Enlighten Editors: Update this record