Understanding and preventing beam damage effects in partially processed high-k gate stacks

Docherty, F.T. , MacKenzie, M., Pennicard, D., Craven, A.J. and McComb, D.W. (2006) Understanding and preventing beam damage effects in partially processed high-k gate stacks. Journal of Physics: Conference Series, 26(1), pp. 231-234. (doi: 10.1088/1742-6596/26/1/055)

Abstract

Electron beam damage effects on a partially and a fully processed HfO2 gate stack on silicon substrates are investigated, and their origins and prevention are discussed. Growth of silica between the silicon and hafnia layers is observed for the partially processed sample but is not seen for the fully processed wafer. Two sources of oxygen are found to react with the substrate to form silica. One is from the glue used in sample preparation. The oxygen from this source can be prevented from diffusing to the substrate by putting a gold barrier layer between the stack and the glue. The other source seems to come from the amorphous HfO2 layer. Using a cooling rod sufficiently slows the diffusion rate so that growth is no longer observed.

• Item Type: Articles
• Additional Information: EMAG–NANO 2005:Imaging, Analysis and Fabrication on the Nanoscale 31 August–2 September 2005, University of Leeds, UK
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: McComb, Dr David and Docherty, Dr Frances and Craven, Professor Alan and MacKenzie, Dr Maureen
• Authors: Docherty, F.T., MacKenzie, M., Pennicard, D., Craven, A.J., and McComb, D.W.
• College/School: College of Science and Engineering > School of Chemistry; College of Science and Engineering > School of Physics and Astronomy
• Journal Name: Journal of Physics: Conference Series
• Publisher: Institute of Physics Publishing Ltd.
• ISSN: 1742-6588
• ISSN (Online): 1742-6596