Hou, L. , Zhu, H. and Wang, W. (2007) Electroabsorption modulator integrated with buried- ridge-stripe dual-core spot-size converter by quantum-well intermixing. IEEE Photonics Technology Letters, 19(10), pp. 756-758. (doi: 10.1109/LPT.2007.895899)
Full text not currently available from Enlighten.
Abstract
A single shallow ridge electroabsorption modulator monolithically integrated with a buried-ridge-stripe dual-core spot-size converter at the input and output port was fabricated by combining quantum-well intermixing and dual-core integration techniques simultaneously, using only a two-step low-pressure metal-organic vapor phase epitaxial process, conventional photolithography, and a chemical wet etching process. The optical insertion loss of the modulator in the on-state and the dc extinction ratio between 0 and -3 V at 1550 nm was -7.5 and 16 dB, respectively. The 3-dB modulation bandwidth was more than 10.0GHz in electrical-optical response
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Hou, Dr Lianping |
| Authors: | Hou, L., Zhu, H., and Wang, W. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | IEEE Photonics Technology Letters |
| Publisher: | IEEE |
| ISSN: | 1041-1135 |
| ISSN (Online): | 1941-0174 |
| Published Online: | 23 April 2007 |
University Staff: Request a correction | Enlighten Editors: Update this record
Deposit and Record Details
Deposit and Record Details