Charge collection efficiency of irradiated silicon detector operated at cryogenic temperatures

Borer, K. et al. (2000) Charge collection efficiency of irradiated silicon detector operated at cryogenic temperatures. Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment, 440(1), 5 -16. (doi: 10.1016/S0168-9002(99)00799-8)

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Publisher's URL: http://dx.doi.org/10.1016/S0168-9002(99)00799-8

Abstract

The charge collection efficiency (CCE) of heavily irradiated silicon diode detectors was investigated at temperatures between 77 and 200 K. The CCE was found to depend on the radiation dose, bias voltage value and history, temperature, and bias current generated by light. The detector irradiated to the highest fluence 2 x 10(15) n/cm(2) yields a MIP signal of at least 15000 e(-) both at 250 V forward bias voltage, and at 250 V reverse bias voltage in the presence of a light-generated current. The "Lazarus effect" was thus shown to extend to fluences at least ten times higher than was previously studied.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:O'Shea, Professor Val and Smith, Professor Kenway and Bell, Dr William
Authors: Borer, K., Janos, S., Palmieri, V.G., Dezillie, B., Li, Z., Collins, P., Niinikoski, T.O., Lourenco, C., Sonderegger, P., Borchi, E., Bruzzi, M., Pirollo, S., Granata, V., Pagano, S., Chapuy, S., Dimcovski, Z., Grigoriev, E., Bell, W., Devine, S., O'Shea, V., Smith, K., Berglund, P., De Boer, W., Hauler, F., Heising, S., Jungermann, L., Casagrande, L., Cindro, V., Mikuz, M., Zavartanik, M., Da Via, C., Esposito, A., Konorov, I., Paul, S., Schmitt, L., Buontempo, S., D'Ambrosio, N., Pagano, S., Ruggiero, G., Eremin, V., and Verbitskaya, E.
Subjects:Q Science > QC Physics
College/School:College of Science and Engineering > School of Physics and Astronomy
Journal Name:Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment
ISSN:0168-9002
ISSN (Online):1872-9576

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