Ge-on-Si photonics for mid-infrared sensing applications

Gallacher, K. et al. (2016) Ge-on-Si photonics for mid-infrared sensing applications. MRS Advances, 1(48), pp. 3269-3279. (doi: 10.1557/adv.2016.391)

133461.pdf - Accepted Version



There is significant interest to develop cheap CMOS compatible sensors that operate in the mid-infrared (MIR). To meet these requirements, Ge-on-Si is proving to be an exciting platform. There is the potential to realize waveguide integrated quantum well infrared photodetectors (QWIPs) based on Ge quantum wells (QWs). Intersubband absorption from p-Ge QWs has been demonstrated in the important atmospheric transmission window of 8-13 μm. An alternative strategy for sensing in the MIR is demonstrated through highly n-type doped Ge plasmonic antennas. These antennas demonstrate vibrational sensing of polydimethylsiloxane (PDMS) spin coated layers at 12.5 μm wavelength. These demonstrate enhanced sensing capabilities due to the localized hot spots of the antenna resonant modes.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas and Millar, Dr Ross and MacLaren, Dr Ian and Bashir, Ms Aneeqa and Samarelli, Mr Antonio and Gallacher, Dr Kevin
Authors: Gallacher, K., Baldassarre, L., Samarelli, A., Millar, R.W., Ballabio, A., Frigerio, J., Isella, G., Bashir, A., MacLaren, I., Giliberti, V., Pellegrini, G., Biagioni, P., Ortolani, M., and Paul, D.J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
College of Science and Engineering > School of Physics and Astronomy
Journal Name:MRS Advances
Publisher:Cambridge University Press
ISSN (Online):2059-8521
Published Online:23 May 2016
Copyright Holders:Copyright © 2016 Materials Research Society
First Published:First published in MRS Advances 1(48):3269-3279
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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