AlGaInN Laser Diode Technology for Systems Applications

Najda, S. P. et al. (2016) AlGaInN Laser Diode Technology for Systems Applications. In: Gallium Nitride Materials and Devices XI, San Francisco, CA, USA, 15-18 Feb 2016, p. 974819. ISBN 9781628419832 (doi: 10.1117/12.2207231)

133235.pdf - Accepted Version



Gallium Nitride (GaN) laser diodes fabricated from the AlGaInN material system is an emerging technology that allows laser diodes to be fabricated over a very wide wavelength range from u.v. to the visible, and is a key enabler for the development of new system applications such as (underwater and terrestrial) telecommunications, quantum technologies, display sources and medical instrumentation.

Item Type:Conference Proceedings
Glasgow Author(s) Enlighten ID:Watson, Dr Scott and Kelly, Professor Anthony
Authors: Najda, S. P., Perlin, P., Suski, T., Marona, L., Bockowski, M., Leszczyński, M., Wisniewski, P., Czernecki, R., Kucharski, R., Targowski, G., Watson, S., and Kelly, A.E.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Copyright Holders:Copyright © 2016 SPIE
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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