Mirza, M. M. A. , Zhou, H., Docherty, K., Thoms, S. , Macintyre, D. and Paul, D. (2012) High Aspect Ratio (~25:1) Sub-10 Nm HSQ Lines Using Electron Beam Lithography. In: EIPBN 2012: The 56th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication, Waikoloa,HI USA, 29 May - 01 June 2012., Waikoloa, HI, USA, 29 May - 1 June 2012,
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Publisher's URL: http://eipbn.org/2012/eipbn-2012-posters-p01-to-p04/
Abstract
This paper reports the challenging work in producing ultra high aspect ratio ~25:1 sub-10 nm HSQ lines using 250 nm thick HSQ resist, which is successfully used as the etch mask and provides the flexibility for high resolution pattern transfer.
| Item Type: | Conference Proceedings |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Mirza, Dr Muhammad M A and Zhou, Dr Haiping and Thoms, Dr Stephen and Docherty, Mr Kevin and Macintyre, Dr Douglas and Paul, Professor Douglas |
| Authors: | Mirza, M. M. A., Zhou, H., Docherty, K., Thoms, S., Macintyre, D., and Paul, D. |
| Subjects: | Q Science > Q Science (General) |
| College/School: | College of Science and Engineering > School of Engineering |
| Research Group: | Semiconductor Device Group and James Watt Nanofabrication Centre |
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