Mid-Infrared Intersubband Absorption from P-Ge Quantum Wells on Si

Gallacher, K. , Millar, R.W. , Ballabio, A., Frigerio, J., Bashir, A., MacLaren, I. , Isella, G., Ortolani, M. and Paul, D.J. (2016) Mid-Infrared Intersubband Absorption from P-Ge Quantum Wells on Si. In: 41st International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2016), Copenhagen, Denmark, 25-30 Sept 2016, ISBN 9781467384858 (doi: 10.1109/IRMMW-THz.2016.7758421)

Abstract

Mid-infrared intersubband absorption from p-Ge quantum wells with Si0.5Ge0.5 barriers grown on a Si substrate is demonstrated from 6 to 9 μm wavelength at room temperature and can be tuned by adjusting the quantum well thickness. Fourier transform infra-red spectroscopy measurements demonstrate clear absorption peaks corresponding to intersubband transitions among confined hole states. The work indicates an approach that will allow quantum well intersubband photodetectors to be realized on Si substrates in the important atmospheric transmission window of 8–13 μm.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Paul, Professor Douglas and Millar, Dr Ross and MacLaren, Dr Ian and Bashir, Ms Aneeqa and Gallacher, Dr Kevin
• Authors: Gallacher, K., Millar, R.W., Ballabio, A., Frigerio, J., Bashir, A., MacLaren, I., Isella, G., Ortolani, M., and Paul, D.J.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering; College of Science and Engineering > School of Physics and Astronomy
• ISSN: 2162-2035
• ISBN: 9781467384858
• Copyright Holders: Copyright © 2016 IEEE
• Publisher Policy: Reproduced in accordance with the copyright policy of the publisher