Optical Emission Spectrometry of Plasma in Low-Damage Sub-100 Nm Tungsten Gate Reactive Ion Etching Process for Compound Semiconductor Transistors

Li, X. , Zhou, H., Wilkinson, C. D.W. and Thayne, I. G. (2006) Optical Emission Spectrometry of Plasma in Low-Damage Sub-100 Nm Tungsten Gate Reactive Ion Etching Process for Compound Semiconductor Transistors. 6th International Conference on Reactive Plasmas and 23rd Symposium on Plasma Processing (ICRP-6/SPP-23), 24-27 Jan 2006. pp. 8364-8369.

Abstract

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• Item Type: Conference or Workshop Item
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Zhou, Dr Haiping and Thayne, Prof Iain and Wilkinson, Professor Christopher and Li, Dr Xu
• Authors: Li, X., Zhou, H., Wilkinson, C. D.W., and Thayne, I. G.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Japanese Journal of Applied Physics
• Publisher: IOP Publishing
• ISSN (Online): 1347-4065