High Mobility III-V MOSFET Technology

Passlack, M. et al. (2007) High Mobility III-V MOSFET Technology. In: 7th Topical Workshop on Heterostructure Microelectronics (TWHM 2007), Chiba, Japan, 21-24 Aug 2007,

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1 µm GaAs enhancement-mode MOSFETs have been manufactured with a threshold voltage, maximum drain current, maximum transconductance, on-resistance, drain conductance, subthreshold swing, and gate current of 0.28 V, 397 mA/mm, 428 mS/mm, and 2.3 Ω mm, 10 mS/mm, 100 mV/dec, < 60 nA, respectively. An off-state breakdown voltage of 18 V was measured for an oxide thickness of 18 nm. An effective channel mobility of ≅ 5,500 cm2/Vs was measured on a 20 µm gate length device using the split C-V method. These devices are potentially suitable for RF power amplification, switching, and power control in mobile and wireless applications. The high MOSFET channel mobility is of interest for future CMOS applications.

Item Type:Conference Proceedings
Glasgow Author(s) Enlighten ID:Li, Dr Xu and Zhou, Dr Haiping and Thayne, Prof Iain and Macintyre, Dr Douglas and Thoms, Dr Stephen and Hill, Mr Richard and Moran, Professor David
Authors: Passlack, M., Droopad, R., Rajagopalan, K., Abrokwah, J., Zurcher, P., Hill, R., Moran, D., Li, X., Zhou, H., Macintyre, D., Thoms, S., and Thayne, I.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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