Baldassarre, L. et al. (2016) Mid-infrared sensing using heavily doped germanium plasmonics on silicon substrates. ECS Transactions, 75(8), pp. 247-251. (doi: 10.1149/07508.0247ecst)
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Abstract
Heavily-doped semiconductor films are very promising to produce mid-infrared plasmonic devices for a wide range of sensing applications because the real part of the dielectric function of the film is negative and broadly tunable in this wavelength range. In this work, we investigate, n-type doped Ge epilayers grown on Si substrates. We design and realize Ge nano-antennas on Si substrates demonstrating the presence of localized plasmon resonances, and exploit these resonances for molecular sensing in the mid-infrared.
| Item Type: | Articles |
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| Additional Information: | PRiME 2016/230th ECS Meeting, Honolulu, HI, USA, 2-7 Oct 2016. |
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Paul, Professor Douglas and Samarelli, Mr Antonio and Gallacher, Dr Kevin |
| Authors: | Baldassarre, L., Sakat, E., Frigerio, J., Frigerio, J.B.J., Samarelli, A., Giliberti, V., Pellegrini, G., Gallacher, K., Fischer, M., Brida, D., Isella, G., Biagioni, P., Paul, D. J., and Ortolani, M. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering College of Science and Engineering > School of Physics and Astronomy |
| Journal Name: | ECS Transactions |
| Publisher: | The Electrochemical Society |
| ISSN: | 1938-6737 |
| ISSN (Online): | 1938-6737 |
| Copyright Holders: | Copyright © 2016 The Eletrochemical Society |
| First Published: | First published in ECS Transactions 75(8):247-251 |
| Publisher Policy: | Reproduced in accordance with the copyright policy of the publisher |
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