Toward defect-free semi-polar GaN templates on pre-structured sapphire

Han, Y., Caliebe, M., Hage, F., Ramasse, Q., Pristovsek, M., Zhu, T., Scholz, F. and Humphreys, C. (2016) Toward defect-free semi-polar GaN templates on pre-structured sapphire. Physica Status Solidi B: Basic Solid State Physics, 253(5), pp. 834-839. (doi: 10.1002/pssb.201552636)

[img]
Preview
Text
131179.pdf - Accepted Version

731kB

Abstract

The microstructure of semi-polar (11–22) GaN templates grown on pre-structured r-plane sapphire by MOVPE has been characterized by TEM. Cross-sectional observations indicate that defects are generated in three regions of the layers: threading dislocations at the inclined GaN/sapphire interface, basal plane stacking faults (BSFs) at the c−-wing, BSFs and threading dislocations at the coalescence between neighboring GaN stripes. An in situ SiN interlayer deposited at an early stage of the growth is shown to be effective in blocking the propagation of dislocations, which is mainly attributed to SiN formed on the c-plane rather than on the (11–22) plane. Si-doped marker layers have been used to study the evolution of the growth front before coalescence as a function of temperature. A high growth temperature is associated with the formation of highly faceted GaN stripes. Dislocations originally running along the c-direction are bent to the [11–20] direction driven by a progressing (11–22) facet. An efficient defect reduction is realized as a result of terminating these dislocations at voids partially defined by the (11–20) facet.

Item Type:Articles
Additional Information:This work was financially supported by the EuropeanCommission (FP7) within the framework of the project “AlGaInNmaterials on semi-polar templates for yellow emission in solid statelighting applications” (ALIGHT) (Project No.: 280587) and by theDeutsche Forschungsgemeinschaft (DFG) within the framework ofthe project “Polarization Field Control in Nitride Light Emitters”(PolarCoN).
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Hage, Dr Fredrik Sydow
Authors: Han, Y., Caliebe, M., Hage, F., Ramasse, Q., Pristovsek, M., Zhu, T., Scholz, F., and Humphreys, C.
College/School:College of Science and Engineering > School of Physics and Astronomy
Journal Name:Physica Status Solidi B: Basic Solid State Physics
Publisher:Wiley
ISSN:0370-1972
ISSN (Online):1521-3951
Published Online:12 December 2015
Copyright Holders:Copyright © 2015 Wiley-VCH Verlag GmbH and Co. KGaA
First Published:First published in Physica Status Solidi B: Basic Solid State Physics 253(5): 834-839
Publisher Policy:Reproduced in accordance with the publisher copyright policy

University Staff: Request a correction | Enlighten Editors: Update this record