GaN on low resistivity silicon THz high -Q passive device technology

Eblabla, A. M., Li, X. , Wallis, D. J., Guiney, I. and Elgaid, K. (2017) GaN on low resistivity silicon THz high -Q passive device technology. IEEE Transactions on Terahertz Science and Technology, 7(1), pp. 93-97. (doi: 10.1109/TTHZ.2016.2618751)

Abstract

In this paper, viable transmission media technology has been demonstrated for the first time on GaN on low-resistivity silicon) substrates (ρ < 40 Ω·cm) at H-band frequencies (220–325 GHz). The shielded-elevated coplanar waveguide (CPW) lines employ a standard monolithic microwave integrated circuit compatible air bridge process to elevate the CPW traces above a 5-μm layer of benzocyclobutene on shielded metalized ground plates. An insertion loss of less than 2.3 dB/mm was achieved up to 325 GHz, compared with 27 dB/mm for CPW fabricated directly on the substrate. To prove the efficiency of the technology, a short-circuited stub filter with a resonant frequency of 244 GHz was used. The filter achieved an unloaded Q-factor of 28, along with an insertion loss of 0.35 dB and a return loss of – 34 dB. To our knowledge, these results are the best reported to date for GaN-based technology.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Li, Dr Xu and Elgaid, Dr Khaled
• Authors: Eblabla, A. M., Li, X., Wallis, D. J., Guiney, I., and Elgaid, K.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: IEEE Transactions on Terahertz Science and Technology
• Publisher: Institute of Electrical and Electronics Engineers
• ISSN: 2156-342X
• ISSN (Online): 2156-3446
• Published Online: 28 October 2016
• Copyright Holders: Copyright © 2017 IEEE
• First Published: First published in IEEE Transactions on Terahertz Science and Technology 7(1):93-97
• Publisher Policy: Reproduced in accordance with the copyright policy of the publisher

Project Code	Award No	Project Name	Principal Investigator	Funder's Name	Funder Ref	Lead Dept
69820	1	Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates	Khaled Elgaid	Engineering & Physical Sciences Research Council (EPSRC)	EP/N014820/1	ENG - ENGINEERING ELECTRONICS & NANO ENG