A dual-grating InGaAsP/InP DFB laser integrated with an SOA for THz generation

Deng, Q., Xu, J., Guo, L., Liang, S., Hou, L. and Zhu, H. (2016) A dual-grating InGaAsP/InP DFB laser integrated with an SOA for THz generation. IEEE Photonics Technology Letters, 28(21), pp. 2307-2310. (doi: 10.1109/LPT.2016.2592505)

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Abstract

We report a dual-mode semiconductor laser that has two gratings with different periods below and above the active layer. A semiconductor optical amplifier (SOA), which is integrated with the dual-mode laser, plays an important role in balancing the optical power and reducing the linewidths of the emission modes. A stable two mode emission with the 13.92-nm spacing can be obtained over a wide range of distributed feedback and SOA injection currents. Compared with other types of dual-mode lasers, our device has the advantages of simple structure, compact size, and low fabrication cost.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Zhu, Professor Hongliang and Hou, Dr Lianping
Authors: Deng, Q., Xu, J., Guo, L., Liang, S., Hou, L., and Zhu, H.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Photonics Technology Letters
Publisher:IEEE
ISSN:1041-1135
ISSN (Online):1941-0174
Copyright Holders:Copyright © 2016 IEEE
First Published:First published in IEEE Photonics Technology Letters 28(21): 2307-2310
Publisher Policy:Reproduced in accordance with the publisher copyright policy

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