Deng, Q., Xu, J., Guo, L., Liang, S., Hou, L. and Zhu, H. (2016) A dual-grating InGaAsP/InP DFB laser integrated with an SOA for THz generation. IEEE Photonics Technology Letters, 28(21), pp. 2307-2310. (doi: 10.1109/LPT.2016.2592505)
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Abstract
We report a dual-mode semiconductor laser that has two gratings with different periods below and above the active layer. A semiconductor optical amplifier (SOA), which is integrated with the dual-mode laser, plays an important role in balancing the optical power and reducing the linewidths of the emission modes. A stable two mode emission with the 13.92-nm spacing can be obtained over a wide range of distributed feedback and SOA injection currents. Compared with other types of dual-mode lasers, our device has the advantages of simple structure, compact size, and low fabrication cost.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Zhu, Professor Hongliang and Hou, Dr Lianping |
Authors: | Deng, Q., Xu, J., Guo, L., Liang, S., Hou, L., and Zhu, H. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | IEEE Photonics Technology Letters |
Publisher: | IEEE |
ISSN: | 1041-1135 |
ISSN (Online): | 1941-0174 |
Copyright Holders: | Copyright © 2016 IEEE |
First Published: | First published in IEEE Photonics Technology Letters 28(21): 2307-2310 |
Publisher Policy: | Reproduced in accordance with the publisher copyright policy |
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