Study of electro-absorption effects in 1300nm In(Ga)As/GaAs quantum dot materials

Sobhani, S.A., Childs, D.T. , Babazadeh, N., Stevens, B.J., Nishi, K., Sugawara, M., Takemasa, K. and Hogg, R.A. (2016) Study of electro-absorption effects in 1300nm In(Ga)As/GaAs quantum dot materials. In: Physics and Simulation of Optoelectronic Devices XXIV, San Francisco, California, USA, 15-18 Feb 2016, 97420S1. ISBN 9781628419771 (doi: 10.1117/12.2213187)

Abstract

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• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Childs, Dr David and Hogg, Professor Richard and Babazadeh, Dr Nasser
• Authors: Sobhani, S.A., Childs, D.T., Babazadeh, N., Stevens, B.J., Nishi, K., Sugawara, M., Takemasa, K., and Hogg, R.A.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• ISSN: 0277-786X
• ISBN: 9781628419771
• Copyright Holders: Copyright © 2016 SPIE
• First Published: First published in Proceedings of SPIE 9742: 97420S-1
• Publisher Policy: Reproduced in accordance with the publisher copyright policy