Jiang, X., Guo, S., Wang, R., Wang, X., Cheng, B., Asenov, A. and Huang, R. (2016) A device-level characterization approach to quantify the impacts of different random variation sources in FinFET technology. IEEE Electron Device Letters, 37(8), pp. 962-965. (doi: 10.1109/LED.2016.2581878)
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124447.pdf - Accepted Version 1MB |
Abstract
A simple device-level characterization approach to quantitatively evaluate the impacts of different random variation sources in FinFETs is proposed. The impacts of random dopant fluctuation are negligible for FinFETs with lightly doped channel, leaving metal gate granularity and line-edge roughness as the two major random variation sources. The variations of Vth induced by these two major categories are theoretically decomposed based on the distinction in physical mechanisms and their influences on different electrical characteristics. The effectiveness of the proposed method is confirmed through both TCAD simulations and experimental results. This letter can provide helpful guidelines for variation-aware technology development.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Wang, Dr Xingsheng and Asenov, Professor Asen and Cheng, Dr Binjie |
| Authors: | Jiang, X., Guo, S., Wang, R., Wang, X., Cheng, B., Asenov, A., and Huang, R. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | IEEE Electron Device Letters |
| Publisher: | IEEE |
| ISSN: | 0741-3106 |
| Published Online: | 16 June 2016 |
| Copyright Holders: | Copyright © 2016 IEEE |
| First Published: | First published in IEEE Electron Device Letters 37(8):962-965 |
| Publisher Policy: | Reproduced in accordance with the copyright policy of the publisher |
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