Investigating physical and chemical changes in high-k gate stacks using nanoanalytical electron microscopy

Craven, A.J., MacKenzie, M., McComb, D.W. and Docherty, F.T. (2005) Investigating physical and chemical changes in high-k gate stacks using nanoanalytical electron microscopy. Microelectronic Engineering, 80, pp. 90-97. (doi: 10.1016/j.mee.2005.04.048)

Abstract

The thermal budget involved in processing high-k gate stacks can cause undesirable physical and chemical changes which limit device performance. The transmission electron microscope and associated analytical techniques provide a way of investigating these changes on a sub-nanometre scale. Using electron energy loss near edge structure (ELNES), information on the local chemistry may be extracted. These techniques are applied to high-k dielectric stacks grown on Si and containing HfO2 and HfSiO layers.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Docherty, Dr Frances and McComb, Dr David and MacKenzie, Dr Maureen and Craven, Professor Alan
• Authors: Craven, A.J., MacKenzie, M., McComb, D.W., and Docherty, F.T.
• College/School: College of Science and Engineering > School of Chemistry; College of Science and Engineering > School of Physics and Astronomy
• Journal Name: Microelectronic Engineering
• Publisher: Elsevier
• ISSN: 0167-9317
• ISSN (Online): 1873-5568
• Published Online: 04 June 2005