High performance microstrip resonant tunneling diode oscillators as terahertz sources

Wasige, E. , Al-Khalidi, A. , Alharbi, K. and Wang, J. (2017) High performance microstrip resonant tunneling diode oscillators as terahertz sources. In: UK-Europe-China Workshop on mm-waves and THz Technologies committee (UCMMT2016), Qingdao, China, 5-7 Sep 2016, pp. 25-28. ISBN 9781509022762 (doi: 10.1109/UCMMT.2016.7873950)

123257.pdf - Accepted Version



This paper prepents monolithic microwave integrated circuits (MMIC) employing large size resonant tunneling diode (RTD) with high power at high frequencies. This is achieved by proper design of the resonating inductances which are realized by shorted microstrip transmission lines with low characteristic impedances (Z0 = 10.4 Ω). Two oscillators were fabricated using photolithography. Oscillation frequencies of 312 GHz delivering 0.15 mW and 262 GHz delivering 0.19 mW were measured for oscillators employing a single 4 μm × 4 μm and 5 μm × 5 μm RTD devices, respectively.

Item Type:Conference Proceedings
Additional Information:This work was supported by the European Commission, grant agreement no. 645369 (iBROW project).
Glasgow Author(s) Enlighten ID:Wasige, Professor Edward and Wang, Dr Jue and Al-Khalidi, Dr Abdullah
Authors: Wasige, E., Al-Khalidi, A., Alharbi, K., and Wang, J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Published Online:09 March 2017
Copyright Holders:Copyright © 2016 IEEE
First Published:First published in 2016 IEEE 9th UK-Europe-China Workshop on Millimetre Waves and Terahertz Technologies (UCMMT): 25-28
Publisher Policy:Reproduced in accordance with the publisher copyright policy
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