Room temperature all-silicon photonic crystal nanocavity light emitting diode at sub-bandgap wavelengths

Shakoor, A. et al. (2013) Room temperature all-silicon photonic crystal nanocavity light emitting diode at sub-bandgap wavelengths. Laser and Photonics Reviews, 7(1), pp. 114-121. (doi: 10.1002/lpor.201200043)

Abstract

Silicon is now firmly established as a high performance photonic material. Its only weakness is the lack of a native electrically driven light emitter that operates CW at room temperature, exhibits a narrow linewidth in the technologically important 1300–1600 nm wavelength window, is small and operates with low power consumption. Here, an electrically pumped all-silicon nano light source around 1300–1600 nm range is demonstrated at room temperature. Using hydrogen plasma treatment, nano-scale optically active defects are introduced into silicon, which then feed the photonic crystal nanocavity to enhance the electrically driven emission in a device via Purcell effect. A narrow ( nm) emission line at 1515 nm wavelength with a power density of is observed, which represents the highest spectral power density ever reported from any silicon emitter. A number of possible improvements are also discussed, that make this scheme a very promising light source for optical interconnects and other important silicon photonics applications.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Shakoor, Dr Abdul
• Authors: Shakoor, A., Lo Savio, R., Cardile, P., Portalupi, S. L., Gerace, D., Welna, K., Boninelli, S., Franzò, G., Priolo, F., Krauss, T. F., Galli, M., and O'Faolain, L.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Laser and Photonics Reviews
• Publisher: Wiley
• ISSN: 1863-8880
• ISSN (Online): 1863-8899
• Published Online: 10 September 2012