Enhanced 154 μm emission in Y-Er disilicate thin films on silicon photonic crystal cavities

Lo Savio, R. et al. (2013) Enhanced 154 μm emission in Y-Er disilicate thin films on silicon photonic crystal cavities. Optics Express, 21(8), pp. 10278-10288. (doi: 10.1364/OE.21.010278) (PMID:23609737)

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Abstract

We introduce an Y-Er disilicate thin film deposited on top of a silicon photonic crystal cavity as a gain medium for active silicon photonic devices. Using photoluminescence analysis, we demonstrate that Er luminescence at 1.54 μm is enhanced by coupling with the cavity modes, and that the directionality of the Er optical emission can be controlled through far-field optimization of the cavity. We determine the maximum excitation power that can be coupled into the cavity to be 12 mW, which is limited by free carrier absorption and thermal heating. At maximum excitation, we observe that nearly 30% of the Er population is in the excited state, as estimated from the direct measurement of the emitted power. Finally, using time-resolved photoluminescence measurements, we determine a value of 2.3 for the Purcell factor of the system at room temperature. These results indicate that overcoating a silicon photonic nanostructure with an Er-rich dielectric layer is a promising method for achieving light emission at 1.54 µm wavelength on a silicon platform.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Shakoor, Dr Abdul
Authors: Lo Savio, R., Miritello, M., Shakoor, A., Cardile, P., Welna, K., Andreani, L.C., Gerace, D., Krauss, T. F., O’Faolain, L., Priolo, F., and Galli, M.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Optics Express
Publisher:Optical Society of America
ISSN:1094-4087
ISSN (Online):1094-4087
Published Online:18 April 2013

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