Pusino, V. , Xie, C., Khalid, A. , Steer, M. J., Sorel, M. , Thayne, I. G. and Cumming, D. R.S. (2016) InSb photodiodes for monolithic active focal plane arrays on GaAs substrates. IEEE Transactions on Electron Devices, 63(8), pp. 3135-3142. (doi: 10.1109/TED.2016.2578982)
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Abstract
We describe the development and optical characterization of a planar medium infrared (mid-IR) InSb photodetector on a GaAs substrate technology, capable of integrating MESFETs, to demonstrate a new active pixel device architecture. Our results pave the way for the development of integrated mid-IR focal plane array circuits on a single chip. Device structures with areas down to 0.0016 mm2 were investigated. By deploying a silicon nitride passivation layer, we were able to reduce leakage current in reverse bias by up to 27% to yield an improved rectifier. Extensive optical characterization was carried out in the near- and mid-IR wavelength range. Responsivities of up to 3.54 A/W and quantum efficiency values above unity were obtained in the near-IR range as a consequence of illumination above the bandgap causing impact ionization. In the mid-IR range, responsivities of up to 0.97 A/W were observed. The bandwidth of the devices proved compatible with video-rate standard sampling rates.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Thayne, Prof Iain and Cumming, Professor David and Sorel, Professor Marc and Pusino, Mr Vincenzo and Khalid, Dr Ata-Ul-Habib and Steer, Dr Matthew |
| Authors: | Pusino, V., Xie, C., Khalid, A., Steer, M. J., Sorel, M., Thayne, I. G., and Cumming, D. R.S. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | IEEE Transactions on Electron Devices |
| Publisher: | Institute of Electrical and Electronics Engineers |
| ISSN: | 0018-9383 |
| ISSN (Online): | 1557-9646 |
| Published Online: | 21 June 2016 |
| Copyright Holders: | Copyright © 2016 The Authors |
| First Published: | First published in IEEE Transactions on Electron Devices 63(8):3135-3142 |
| Publisher Policy: | Reproduced under a Creative Commons License |
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