Optimization of the Epitaxial Design of High Current Density Resonant Tunneling Diodes for Terahertz Emitters

Baba, R., Stevens, B. J., Mukai, T. and Hogg, R. A. (2016) Optimization of the Epitaxial Design of High Current Density Resonant Tunneling Diodes for Terahertz Emitters. In: SPIE Photonics West, San Francisco, CA, USA, 13-18 Feb 2016, 97552W. (doi: 10.1117/12.2212346)

Abstract

We discuss the numerical simulation of high current density InGaAs/AlAs/InP resonant tunneling diodes with a view to their optimization for application as THz emitters. We introduce a figure of merit based upon the ratio of maximum extractable THz power and the electrical power developed in the chip. The aim being to develop high efficiency emitters as output power is presently limited by catastrophic failure. A description of the interplay of key parameters follows, with constraints on strained layer epitaxy introduced. We propose an optimized structure utilizing thin barriers paired with a comparatively wide quantum well that satisfies strained layer epitaxy constraints.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Hogg, Professor Richard and Baba, Mr Razvan
• Authors: Baba, R., Stevens, B. J., Mukai, T., and Hogg, R. A.
• Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Research Group: Photonic Devices and Systems Group
• ISSN: 0277-786X
• Published Online: 13 February 2016
• Copyright Holders: Copyright © 2016 SPIE
• First Published: First published in Proceedings of SPIE 9755: 97552W
• Publisher Policy: Reproduced in accordance with the publisher copyright policy