Xie, C., Pusino, V. , Khalid, A. , Aziz, M., Steer, M. J. and Cumming, D. R.S. (2016) Monolithic Fabrication of InSb-based Photo-Pixel for Mid-IR Imaging. In: 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), Toyama, Japan, 26-30 Jun 2016, ISBN 9781509019649 (doi: 10.1109/ICIPRM.2016.7528581)
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Abstract
We present the monolithic fabrication of an active photo-pixel made in InSb on a GaAs substrate that is suitable for large-scale integration into a focal plane array. Pixel addressing is provided by the co-integration of a GaAs MESFET with an InSb photodiode. Various highly selective etch processes for distinct material layers were established. A low temperature annealed Ohmic contact was also achieved so that the processing temperature never exceeded 180 ˚C and no damage to the InSb detectors was observed. Furthermore, since there is a considerable etch step (> 6 μm) that metal must straddle without breaking, we developed an intermediate step using polyimide to provide a smoothing section between the lower MESFET and upper photodiode regions of the device. This heterogeneous technology creates great potential to realize a new type of monolithic focal plane array of addressable pixels for imaging in the medium wavelength infrared range.
Item Type: | Conference Proceedings |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Cumming, Professor David and Pusino, Dr Vincenzo and Khalid, Dr Ata-Ul-Habib and Aziz, Dr Mohsin and Steer, Dr Matthew |
Authors: | Xie, C., Pusino, V., Khalid, A., Aziz, M., Steer, M. J., and Cumming, D. R.S. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
ISBN: | 9781509019649 |
Published Online: | 04 August 2016 |
Copyright Holders: | Copyright © 2016 IEEE |
First Published: | First published in 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) |
Publisher Policy: | Reproduced in accordance with the copyright policy of the publisher |
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