Chen, S. et al. (2015) GaAs-based superluminescent light-emitting diodes with 290-nm emission bandwidth by using hybrid quantum well/quantum dot structures. Nanoscale Research Letters, 10(1), 340. (doi: 10.1186/s11671-015-1049-2) (PMID:26303141) (PMCID:PMC4547973)
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Abstract
A high-performance superluminescent light-emitting diode (SLD) based upon a hybrid quantum well (QW)/quantum dot (QD) active element is reported and is assessed with regard to the resolution obtainable in an optical coherence tomography system. We report on the appearance of strong emission from higher order optical transition from the QW in a hybrid QW/QD structure. This additional emission broadening method contributes significantly to obtaining a 3-dB linewidth of 290 nm centered at 1200 nm, with 2.4 mW at room temperature.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Hogg, Professor Richard and Childs, Dr David and Li, Mr Wei |
| Authors: | Chen, S., Li, W., Zhang, Z., Childs, D., Zhou, K., Orchard, J., Kennedy, K., Hugues, M., Clarke, E., Ross, I., Wada, O., and Hogg, R. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Nanoscale Research Letters |
| Publisher: | Springer |
| ISSN: | 1931-7573 |
| ISSN (Online): | 1556-276X |
| Copyright Holders: | Copyright © 2016 Chen et al. |
| First Published: | First published in Nanoscale Research Letters 10(1):340 |
| Publisher Policy: | Reproduced under a Creative Commons License |
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