Advances on CMOS image sensors

Gouveia, L. (2016) Advances on CMOS image sensors. Sensor Review, 36(3), pp. 231-239. (doi: 10.1108/SR-11-2015-0189)

Abstract

This paper offers an introduction to the technological advances of image sensors designed using complementary metal–oxide–semiconductor (CMOS) processes along the last decades. We review some of those technological advances and examine potential disruptive growth directions for CMOS image sensors and proposed ways to achieve them. Those advances include breakthroughs on image quality such as resolution, capture speed, light sensitivity and color detection and advances on the computational imaging. The current trend is to push the innovation efforts even further as the market requires higher resolution, higher speed, lower power consumption and, mainly, lower cost sensors. Although CMOS image sensors are currently used in several different applications from consumer to defense to medical diagnosis, product differentiation is becoming both a requirement and a difficult goal for any image sensor manufacturer. The unique properties of CMOS process allows the integration of several signal processing techniques and are driving the impressive advancement of the computational imaging. With this paper, we offer a very comprehensive review of methods, techniques, designs and fabrication of CMOS image sensors that have impacted or might will impact the images sensor applications and markets.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Gouveia, Mr Luiz
• Authors: Gouveia, L.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Sensor Review
• Publisher: Emerald
• ISSN: 0260-2288
• ISSN (Online): 1758-6828
• Published Online: 07 July 2016
• Copyright Holders: Copyright © 2016 Emerald
• First Published: First published in Sensor Review 36(3):231-239
• Publisher Policy: Reproduced in accordance with the copyright policy of the publisher