Analysis of Ge micro-cavities with in-plane tensile strains above 2%

Millar, R.W. , Gallacher, K. , Frigerio, J., Ballabio, A., Bashir, A., MacLaren, I. , Isella, G. and Paul, D.J. (2016) Analysis of Ge micro-cavities with in-plane tensile strains above 2%. Optics Express, 24(5), pp. 4365-4374. (doi: 10.1364/OE.24.004365)

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Ge on Si micro-disk, ring and racetrack cavities are fabricated and strained using silicon nitride stressor layers. Photoluminescence measurements demonstrate emission at wavelengths ≥ 2.3 μm, and the highest strained samples demonstrate in-plane, tensile strains of > 2%, as measured by Raman spectroscopy. Strain analysis of the micro-disk structures demonstrate that shear strains are present in circular cavities, which can detrimentally effect the carrier concentration for direct band transitions. The advantages and disadvantages of each type of proposed cavity structure are discussed.

Item Type:Articles
Additional Information:The authors would like to thank the staff of the James Watt Nanofabrication Centre for help with the fabrication. The work was funded by U.K. EPSRC (Project no. EP/N003225/1) and EC GEMINI (Project No. 613055).
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas and Millar, Dr Ross and MacLaren, Dr Ian and Gallacher, Dr Kevin
Authors: Millar, R.W., Gallacher, K., Frigerio, J., Ballabio, A., Bashir, A., MacLaren, I., Isella, G., and Paul, D.J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
College of Science and Engineering > School of Physics and Astronomy
Journal Name:Optics Express
Publisher:Optical Society of America
ISSN (Online):1094-4087
Copyright Holders:Copyright © 2016 Optical Society of America
First Published:First published in Optics Express 24(5):4365-4374

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
694301Engineering Quantum Technology Systems on a Silicon PlatformDouglas PaulEngineering & Physical Sciences Research Council (EPSRC)EP/N003225/1ENG - ENGINEERING ELECTRONICS & NANO ENG