Molecular-Metal-Oxide-nanoelectronicS (M-MOS): Achieving the Molecular Limit

Georgiev, V. P. , Markov, S., Vilà-Nadal, L. , Asenov, A. and Cronin, L. (2013) Molecular-Metal-Oxide-nanoelectronicS (M-MOS): Achieving the Molecular Limit. In: 16th International Workshop on Computational Electronics, Nara, Japan, 4-7 June 2013, ISBN 9783901578267

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Nowadays interest in electronic, magnetic and optical materials based on inorganic, organic, hybrid and nano-materials is increasing significantly. The EPSRC funded M-MOS Programme Grant provides an exciting opportunity for research in the field of molecular electronics based on hybrid nano-materials. Its main aim is to establish a link between the variability, scalability and reliability of a non-volatile flash-memory cell, in which the charge-storing components constitute of a layer of polyoxometalates molecular clusters (POMs). POMs are metal-oxide inorganic molecules formed by early transition metal ions and oxo ligands [1]. Importantly, they can undergo multiple times reversible reduction/oxidation, which makes them attractive candidates for multi-bit storage for flash memory cells. The use of redox-active molecules to form the floating gate (FG) could offer several very important advantages over the conventional polysilicon FG [2]. However, the latter concept has not been proven so far and the on-going effort in modelling and simulations of flash-cell transistors with a POM-based floating gate plays a pivotal role for the sustainability of any farther experiment effort in this direction. In this work we use a plethora of modelling techniques embodied in a custom-built Simulation Domain Bridge, connecting the quantum chemical and mesoscopic device modelling, that illustrates the proposed advantages of POMs in the non-volatile molecular memories. Our ultimate goal is to provide informed guidance for both chemical synthesis and device design and fabrication, with the knowledge derived from device modelling and simulation and computational chemistry calculations.

Item Type:Conference Proceedings
Glasgow Author(s) Enlighten ID:Markov, Dr Stanislav and Asenov, Professor Asen and Vila-Nadal, Dr Laia and Cronin, Professor Lee and Georgiev, Professor Vihar
Authors: Georgiev, V. P., Markov, S., Vilà-Nadal, L., Asenov, A., and Cronin, L.
College/School:College of Science and Engineering > School of Chemistry
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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