Influence of Quantum Confinement Effects and Device Electrostatic Driven Performance in Ultra-Scaled SixGe1-x Nanowire Transistors

Al-Ameri, T. , Georgiev, V. , Adamu-Lema, F. and Asenov, A. (2016) Influence of Quantum Confinement Effects and Device Electrostatic Driven Performance in Ultra-Scaled SixGe1-x Nanowire Transistors. In: 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS 2016), Vienna, Austria, 25-27 Jan 2016, pp. 234-237. ISBN 9781467386104 (doi: 10.1109/ULIS.2016.7440096)

116508.pdf - Accepted Version



In this work we have investigated the impact of quantum mechanical effects on the device performance of n-type in ultra-scaled SixGe1-x nanowire transistors (NWT) for possible future applications. For the purpose of this paper SixGe1-x NWTs with different SixGe1-x molar fraction has been simulated. However, in all devices the cross-sectional area, dimensions and doping profiles are kept constant in order to provide fair comparison. The design of computational experiment in this work includes nanowire transistors with different gate length of 6nm, 8nm, 10nm, 12nm and 14nm. All wires are simulated with various SixGe1-x ratio. As a result we have established a correlation between the mobile charge distribution in the channel and gate capacitance, drain induced barrier lowering (DIBL) and the sub-threshold slope (SS). The mobile charge to gate capacitance ratio, which is an indicator of the intrinsic speed of the NWTs, is also have been investigated. More importantly all calculations are based on quantum mechanical description of the mobile charge distribution in the channel. This description is based on Schrödinger equation, which is indeed preferred approach for nanowires with such ultra-scale dimensions.

Item Type:Conference Proceedings
Glasgow Author(s) Enlighten ID:Georgiev, Professor Vihar and Asenov, Professor Asen and Al-Ameri, Talib Mahmood Ali and Adamu-Lema, Dr Fikru
Authors: Al-Ameri, T., Georgiev, V., Adamu-Lema, F., and Asenov, A.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Copyright Holders:Copyright © 2016 IEEE
First Published:First published in
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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