Intrinsic DC Operation and Performance Potential of 50nm Gate Length Hydrogen-Terminated Diamond Field Effect Transistors

Moran, D. A. J. , Fox, O. J. L., McLelland, H., Russell, S. and May, P. W. (2011) Intrinsic DC Operation and Performance Potential of 50nm Gate Length Hydrogen-Terminated Diamond Field Effect Transistors. In: 69th Annual Device Research Conference (DRC), Santa Barbara, CA, USA, 20-22 June 2011, pp. 137-138. ISBN 9781612842431 (doi: 10.1109/DRC.2011.5994454)

Abstract

The hydrogen-terminated diamond surface has demonstrated unique potential in the development of high power and high frequency field effect transistors (FETs). Further exploration into the intrinsic performance limitations and device operation as gate length is reduced however is essential in unveiling the potential of this exotic material system as a viable and competitive high power and high frequency device technology.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Russell, Dr Stephen and McLelland, Mrs Helen and Moran, Professor David
• Authors: Moran, D. A. J., Fox, O. J. L., McLelland, H., Russell, S., and May, P. W.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• ISSN: 1548-3770
• ISBN: 9781612842431