Characterisation and Inspection of 50nm Gate-Length Hydrogen Terminated Diamond Field Effect Transistors

Moran, D. A. J. , MacLaren, D. A. , Porro, S., Hill, R., McLelland, H., John, P. and Wilson, J. I. B. (2010) Characterisation and Inspection of 50nm Gate-Length Hydrogen Terminated Diamond Field Effect Transistors. In: MRS Fall Meering, Boston MA, USA, 29 Nov - 3 Dec 2010,

Abstract

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• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: McLelland, Mrs Helen and Hill, Mr Richard and Moran, Professor David and MacLaren, Professor Donald
• Authors: Moran, D. A. J., MacLaren, D. A., Porro, S., Hill, R., McLelland, H., John, P., and Wilson, J. I. B.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering