120nm Gate Length E-Beam and Nanoimprint T-Gate GaAs pHEMTs Utilizing Non-Annealed Ohmic Contacts

Boyd, E., Moran, D. , McLelland, H., Elgaid, K., Chen, Y., Macintyre, D., Thoms, S. , Stanley, C. R. and Thayne, I. G. (2002) 120nm Gate Length E-Beam and Nanoimprint T-Gate GaAs pHEMTs Utilizing Non-Annealed Ohmic Contacts. In: Compound Semiconductors 2002, Lausanne, Switzerland, 7-10 Oct 2002, ISBN 9780750309424

Abstract

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• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Thayne, Prof Iain and Macintyre, Dr Douglas and McLelland, Mrs Helen and Thoms, Dr Stephen and Stanley, Professor Colin and Moran, Professor David and Elgaid, Dr Khaled
• Authors: Boyd, E., Moran, D., McLelland, H., Elgaid, K., Chen, Y., Macintyre, D., Thoms, S., Stanley, C. R., and Thayne, I. G.
• College/School: College of Science and Engineering > School of Engineering; College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• ISBN: 9780750309424