Atom probe tomography analysis of InAlGaAs capped InAs/GaAs stacked quantum dots with variable barrier layer thickness

Hernández-Saz, J., Herrera, M., Molina, S.I., Stanley, C.R. and Duguay, S. (2016) Atom probe tomography analysis of InAlGaAs capped InAs/GaAs stacked quantum dots with variable barrier layer thickness. Acta Materialia, 103, pp. 651-657. (doi: 10.1016/j.actamat.2015.10.048)

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Abstract

In this work, we analyse by Atom Probe Tomography (APT) the composition distribution of InAs/GaAs stacked quantum dots (QDs) with InAlGaAs capping layers. Two different GaAs barrier layer thicknesses have been considered, 20 nm and 30 nm. Our results have shown the vertical alignment of QDs in the structure with reduced barrier layer and the unexpected formation of InGaAs quantum rings (QRings) surrounded by an Al-rich area in this sample. The APT data show that the QRings contain an amount of In atoms that is double the In composition in the QDs. The reduced strain measured in the QRings with regard to the QDs suggests that this change in morphology is promoted by the reduction in the strain of the nanostructure. The behaviour of Al during the process of formation of the QRings is also discussed.

Item Type:Articles
Additional Information:This work was supported by the Spanish MINECO (projects TEC2011-29120-C05-03, TEC2014-53727-C2-2-R and Consolider Ingenio 2010 CSD2009-00013), the Junta de Andalucía (PAI research group TEP-946 INNANOMAT), and METSA project. Funding Fig. 5. εzz maps calculated in two nanostructures of sample A20. εzz maps obtained from (a) the QRing in layer 6 and (b) the QD in layer 4. Higher strain is found in the QD in spite of the reduced total In content. J. Hernández-Saz et al./Acta Materialia 103 (2016) 651–657 655 from EU (18INPE1403 and Feder) is also acknowledged. The authors greatly acknowledge J. Houard for discussion and help in APT analyses.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Stanley, Professor Colin
Authors: Hernández-Saz, J., Herrera, M., Molina, S.I., Stanley, C.R., and Duguay, S.
College/School:College of Science and Engineering > School of Engineering
Journal Name:Acta Materialia
Publisher:Elsevier
ISSN:13596454
ISSN (Online):1873-2453

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