Kirchoefer, S. W., Holonyak Jr., N., Hess, K., Meehan, K., Gulino, D.A., Drickamer, H.G., Coleman, J.J. and Dapkus, P.D. (1982) High pressure measurements on AlxGa1−xAs-GaAs (x = 0.5 and 1) superlattices and quantum well heterostructure lasers. Journal of Applied Physics, 53(9), p. 6037. (doi: 10.1063/1.331553)
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Abstract
Absorption data on AIAs-GaAs and Alx Gal _ x As-GaAs superlattices (SL's) and emission data on Alx Gal _ x As-GaAs quantum-well heterostructure (QWH) laser diodes subjected to hydrostatic pressure (0-10 kbar) at 300 K are presented. Superlattice absorption data show that the confined-particle transitions, which partition and "label" the r energy band high above the band edge, all move with the same pressure coefficient of 11.5 meV /kbar. (For bulk GaAs, the pressure coefficient is 12.5 me V /kbar. ) The effect of the L indirect minima on the highest observed confined-particle transitions is small; the effect of the X minima is large. At lower pressures, QWH diodes exhibit a pressure dependence similar to that of the free (unconstrained) SL's. The data on QWH diodes demonstrate, however, a size-dependent [Lz (GaAs) < 500 A] shift in slope to a lower (8.5 meV /kbar) energy gap versus pressure coefficient at higher pressures. This change in slope can be explained by considering the effect on the light- and heavy-hole subbands of shear stresses generated within the p-n diode heterostructure.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Meehan, Professor Kathleen |
Authors: | Kirchoefer, S. W., Holonyak Jr., N., Hess, K., Meehan, K., Gulino, D.A., Drickamer, H.G., Coleman, J.J., and Dapkus, P.D. |
College/School: | College of Science and Engineering > School of Engineering |
Journal Name: | Journal of Applied Physics |
Publisher: | American Institute of Physics |
ISSN: | 0021-8979 |
ISSN (Online): | 1089-7550 |
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