Simulation Analysis of the Electro-Thermal Performance of SOI FinFETs

Wang, L., Sadi, T., Brown, A.R., Nedjalkov, M., Alexander, C., Cheng, B., Millar, C. and Asenov, A. (2016) Simulation Analysis of the Electro-Thermal Performance of SOI FinFETs. In: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS 2016), Vienna, Austria, 25-27 Jan 2016, pp. 56-59. ISBN 9781467386098 (doi: 10.1109/ULIS.2016.7440051)

Abstract

The GSS `atomistic' simulator GARAND has been enhanced with a thermal simulation module to investigate the impact of self-heating on FinFET DC operation. This thermal simulation module is based on the solution of the coupled Heat Flow, Poisson, and Current Continuity Equations, which is developed for the benefit of computational efficiency. A new formula for the calculation of the thermal conductivity in the fin region is employed considering both fin shape and temperature dependencies. The heat dissipation through the gate is treated by nonhomogeneous Neumann boundary conditions. The electro-thermal simulation results for an SOI FinFET example, designed to meet the specifications for the 14/16nm CMOS technology generation, are presented. The lattice temperature profiles under different external thermal resistances connected to the gate and the corresponding Id-Vg characteristics are investigated and analysed.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Asenov, Professor Asen and Cheng, Dr Binjie and Wang, Dr Liping and Sadi, Dr Toufik
• Authors: Wang, L., Sadi, T., Brown, A.R., Nedjalkov, M., Alexander, C., Cheng, B., Millar, C., and Asenov, A.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• ISBN: 9781467386098