Crawford, K., Cao, L., Qi, D., Tallaire, A., Limiti, E., Verona, C., Wee, A. T.S. and Moran, D. (2016) Enhanced surface transfer doping of diamond by V2O5 with improved thermal stability. Applied Physics Letters, 108(4), 042103. (doi: 10.1063/1.4940749)
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Abstract
Surface transfer doping of hydrogen-terminated diamond has been achieved utilising V2O5 as a surface electron accepting material. Contact between the oxide and diamondsurface promotes the transfer of electrons from the diamond into the V2O5 as revealed by the synchrotron-based high resolution photoemission spectroscopy. Electrical characterization by Hall measurement performed before and after V2O5 deposition shows an increase in hole carrier concentration in the diamond from 3.0 × 1012 to 1.8 × 1013 cm−2 at room temperature. High temperature Hall measurements performed up to 300 °C in atmosphere reveal greatly enhanced thermal stability of the hole channel produced using V2O5 in comparison with an air-induced surface conduction channel. Transfer doping of hydrogen-terminated diamond using high electron affinity oxides such as V2O5 is a promising approach for achieving thermally stable, high performance diamond based devices in comparison with air-induced surface transfer doping
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Crawford, Mr Kevin and Moran, Professor David |
Authors: | Crawford, K., Cao, L., Qi, D., Tallaire, A., Limiti, E., Verona, C., Wee, A. T.S., and Moran, D. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | Applied Physics Letters |
Publisher: | American Institute of Physics |
ISSN: | 0003-6951 |
ISSN (Online): | 1077-3118 |
Copyright Holders: | Copyright © 2016 American Institute of Physics |
First Published: | First published in Applied Physics Letters 108(4):042103 |
Publisher Policy: | Reproduced in accordance with the copyright policy of the publisher. |
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