Implantation disordering of AlxGa1−xAs superlattices

Gavrilovic, P., Deppe, D. G., Meehan, K., Holonyak, N., Coleman, J. J. and Burnham, R. D. (1985) Implantation disordering of AlxGa1−xAs superlattices. Applied Physics Letters, 47(2), 130. (doi: 10.1063/1.96238)

Abstract

Data are presented showing that layer disordering of Al x Ga1 − x As‐GaAs quantum wellheterostructures (QWH’s) or superlattices (SL’s) via ion implantation can be effected with a lattice constituent (Al), an inert ion (Kr), or an active impurity (Zn, Si, S, etc.). A doping impurity that diffuses (during annealing) via multiple sites, making column III sites available for Al‐Ga interchange, is most effective in layer disordering. However, any implanted ion is itself relatively effective in converting an Al x Ga1 − x As‐GaAs QWH or SL to bulk‐crystal Al y Ga1 − y As (0≤y≤x) via damage‐induced disordering.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Meehan, Professor Kathleen
• Authors: Gavrilovic, P., Deppe, D. G., Meehan, K., Holonyak, N., Coleman, J. J., and Burnham, R. D.
• College/School: College of Science and Engineering > School of Engineering
• Journal Name: Applied Physics Letters
• Publisher: American Institute of Physics
• ISSN: 0003-6951
• ISSN (Online): 1077-3118