Gavrilovic, P., Gavrilovic, J., Meehan, K., Kaliski, R. W., Guido, L. J., Holonyak, N., Hess, K. and Burnham, R. D. (1985) Si-Si pair diffusion and correlation in AlxGa1−xAs and GaAs. Applied Physics Letters, 47(7), 710. (doi: 10.1063/1.96067)
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Abstract
The Si impurity is diffused into GaAs at temperatures in the range 725≤T≤850 °C. Secondary ion mass spectrometry(SIMS)analysis is used to obtain the Si atom density in the Si‐diffused layers. On the basis of the SIMS data and the observation of a distinct exciton peak in absorption for samples diffused at temperatures ≲775 °C, we argue that in the range n Si≲4×101 8/cm3 the Si impurity diffused into GaAs is correlated and is incorporated as Si‐Si nearest‐neighbor pairs.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Meehan, Professor Kathleen |
Authors: | Gavrilovic, P., Gavrilovic, J., Meehan, K., Kaliski, R. W., Guido, L. J., Holonyak, N., Hess, K., and Burnham, R. D. |
College/School: | College of Science and Engineering > School of Engineering |
Journal Name: | Applied Physics Letters |
Publisher: | American Institute of Physics |
ISSN: | 0003-6951 |
ISSN (Online): | 1077-3118 |
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