Martin, P. A., Meehan, K., Gavrilovic, P., Hess, K., Holonyak, N. and Coleman, J. J. (1983) Transient capacitance spectroscopy on large quantum well heterostructures. Journal of Applied Physics, 54(8), 4689. (doi: 10.1063/1.332633)
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Abstract
We report transient capacitancemeasurements on Al x Ga1−x As–GaAs–Al x Ga1 −x As (x∼0.35) double heterojunctions with a large quantum well active region (L z ∼800 Å). It is suggested that the thin GaAs layer acts as a ‘‘giant’’ artificial deep level. It follows then that the band edge discontinuity ΔE c determines the electron emission rates (from the thin layer), thus making it possible for ΔE c to be determined by transient capacitancemeasurements.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Meehan, Professor Kathleen |
Authors: | Martin, P. A., Meehan, K., Gavrilovic, P., Hess, K., Holonyak, N., and Coleman, J. J. |
College/School: | College of Science and Engineering > School of Engineering |
Journal Name: | Journal of Applied Physics |
Publisher: | American Institute of Physics |
ISSN: | 0021-8979 |
ISSN (Online): | 1089-7550 |
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