Meehan, K., Holonyak, N., Burnham, R. D., Paoli, T. L. and Streifer, W. (1983) Wavelength modification (Δℏω=10–40 meV) of room temperature continuous quantum-well heterostructure laser diodes by thermal annealing. Journal of Applied Physics, 54(12), 7190. (doi: 10.1063/1.331957)
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Abstract
Data are presented showing that wavelength modification, of at least 210 Å (from 8180 to 7970 Å), of broad area room temperature pulsed quantum wellheterostructure (QWH) laser diodes is possible by thermal annealing. Thermal annealing at 900 °C for 8 h results in only a minor change in the threshold current density, 385–425 A/cm2, thus making possible similar wavelength modification (8180–8080 Å) of c o n t i n u o u s (cw) 300 K stripe‐geometry QWH laser diodes.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Meehan, Professor Kathleen |
Authors: | Meehan, K., Holonyak, N., Burnham, R. D., Paoli, T. L., and Streifer, W. |
College/School: | College of Science and Engineering > School of Engineering |
Journal Name: | Journal of Applied Physics |
Publisher: | American Institute of Physics |
ISSN: | 0021-8979 |
ISSN (Online): | 1089-7550 |
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