Broadband long-wavelength operation (9700 Å≳λ≳8700 Å) of AlyGa1−yAs-GaAs-InxGa1−xAs quantum well heterostructure lasers in an external grating cavity

Hall, D. C., Major, J. S., Holonyak, N., Gavrilovic, P., Meehan, K., Stutius, W. and Williams, J. E. (1989) Broadband long-wavelength operation (9700 Å≳λ≳8700 Å) of AlyGa1−yAs-GaAs-InxGa1−xAs quantum well heterostructure lasers in an external grating cavity. Applied Physics Letters, 55(8), 752. (doi: 10.1063/1.101796)

Abstract

Data are presented on p‐n Al y Ga1−y As‐ GaAs‐In x Ga1−x As quantum wellheterostructure lasers showing that the large band filling range of a combined GaAs‐In x Ga1−x As quantum well makes possible a very large tuning range in external grating operation. Continuous 300 K laser operation is demonstrated in the 8696–9711 Å range (Δλ∼1000 Å, Δℏω∼150 meV) and pulsed operation in the 8450–9756 Å range (Δλ∼1300 Å, Δℏω∼200 meV). The band filling and gain profile are shown to be continuous from the In x Ga1−x As quantum well (L z ∼125 Å, x∼0.2) up into the surrounding GaAs quantum well (L z ∼430 Å).

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Meehan, Professor Kathleen
• Authors: Hall, D. C., Major, J. S., Holonyak, N., Gavrilovic, P., Meehan, K., Stutius, W., and Williams, J. E.
• College/School: College of Science and Engineering > School of Engineering
• Journal Name: Applied Physics Letters
• Publisher: American Institute of Physics
• ISSN: 0003-6951
• ISSN (Online): 1077-3118