Gallacher, K. et al. (2015) Mid-Infrared Intersubband Absorption in p-Ge/SiGe Quantum Wells Grown on Si. In: 2015 IEEE International Conference on Group IV Photonics (GFP), Vancouver, Canada, 26-28 Aug 2015, pp. 15-16. ISBN 9781479982547 (doi: 10.1109/group4.2015.7305931)
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Abstract
Intersubband absorption from p-Ge quantum wells grown on Si is demonstrated. The absorption can be tuned by adjusting the quantum well thickness. FTIR transmission measurements on as-grown wafers show broad absorption at mid-infrared wavelengths.
Item Type: | Conference Proceedings |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Paul, Professor Douglas and Millar, Dr Ross and Gallacher, Dr Kevin |
Authors: | Gallacher, K., Ballabio, A., Millar, R. W., Samarelli, A., Frigerio, J., Chrastina, D., Isella, G., Baldassarre, L., Ortolani, M., Sakat, E., Biagioni, P., and Paul, D. J. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
ISBN: | 9781479982547 |
Copyright Holders: | Copyright © 2015 IEEE |
Publisher Policy: | Reproduced in accordance with the copyright policy of the publisher |
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