Fu, Y.-C., Peralagu, U. , Li, X. , Ignatova, O. , Millar, D. A. J., Steer, M., Droopad, R. and Thayne, I. (2015) First Demonstration of Cluster Tool Based ICP Etching of (100) and (110) InGaAs MOSCAPs Followed by In-Situ ALD Deposition of HfO2 Including Nitrogen and Hydrogen Plasma Passivation for Non-Planar III-V MOSFETs. In: 46th IEEE Semiconductor Interface Specialists Conference (SISC), Arlington, VA, USA, 02-05 Dec 2015,
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Abstract
No abstract available.
Item Type: | Conference Proceedings |
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Keywords: | III-V, ALD, plasma passivation, MOSCAP, plasma etching |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Thayne, Prof Iain and Peralagu, Mr Uthayasankaran and Steer, Dr Matthew and Li, Dr Xu and Ignatova, Dr Olesya |
Authors: | Fu, Y.-C., Peralagu, U., Li, X., Ignatova, O., Millar, D. A. J., Steer, M., Droopad, R., and Thayne, I. |
Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering College of Science and Engineering > School of Engineering > James Watt Nanofabrication Centre |
Research Group: | Ultrafast |
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