Aziz, M., Felix, J. F., Al Saqri, N., Jameel, D., Mashary, F. S. A., Albalawi, H. M., Alghamdi, H. M. A., Taylor, D. and Henini, M. (2015) Electrical behavior of MBE grown interfacial Misfit GaSb/GaAs heterostructures with and without Te-Doped interfaces. IEEE Transactions on Electron Devices, 62(12), pp. 3980-3986. (doi: 10.1109/TED.2015.2488904)
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Abstract
A detailed study of interface states in interfacial misfit (IMF) grown GaSb on GaAs substrates is presented. Two types of structures, namely, uncompensated and Te compensated, are investigated using current-voltage, capacitance-frequency, conductance-frequency, and deep level transient spectroscopy techniques. Our studies reveal that incorporation of Te at the interface (IMF) causes a degradation of the Te-compensated devices. A higher number of electrical active defects and higher value of interface states are detected in Te-compensated IMF GaSb/GaAs devices compared with as-grown IMF GaSb/GaAs devices.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Aziz, Dr Mohsin |
Authors: | Aziz, M., Felix, J. F., Al Saqri, N., Jameel, D., Mashary, F. S. A., Albalawi, H. M., Alghamdi, H. M. A., Taylor, D., and Henini, M. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | IEEE Transactions on Electron Devices |
Publisher: | Institute of Electrical and Electronics Engineers |
ISSN: | 0018-9383 |
ISSN (Online): | 1557-9646 |
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