Gavrilovic, P., Meehan, K., Guido, L. J., Holonyak, N., Eu, V., Feng, M. and Burnham, R. D. (1985) Si-implanted and disordered stripe-geometry AlxGa1-xAs-GaAs quantum well lasers. Applied Physics Letters, 47, 903. (doi: 0.1063/1.95973)
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Abstract
The Si impurity is implanted into an Al x Ga1−x As‐GaAs quantum wellheterostructure to form, by impurity‐induced layer disordering and donor doping, a stripe‐geometry buried heterostructure laser.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Meehan, Professor Kathleen |
| Authors: | Gavrilovic, P., Meehan, K., Guido, L. J., Holonyak, N., Eu, V., Feng, M., and Burnham, R. D. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Applied Physics Letters |
| Publisher: | A I P Publishing |
| ISSN: | 0003-6951 |
| ISSN (Online): | 1077-3118 |
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