Meehan, K., Gavrilovic, P., Epler, J. E., Hsieh, K. C., Holonyak, N., Burnham, R. D., Thornton, R. L. and Streifer, W. (1985) Donor-induced disorder-defined buried-heterostructure AlxGa1-xAs-GaAs quantum-well lasers. Journal of Applied Physics, 57, 5345. (doi: 10.1063/1.334853)
Full text not currently available from Enlighten.
Abstract
A simple form of a buried heterostructure Al x Ga1−x As‐GaAs quantum‐well laser is described that is realized by impurity‐induced layer disordering (d o n o r‐i n d u c e d disordering). The layer disordering [and the resulting band‐gap shift to higher energy (and lower index)] is accomplished by Si diffusion in a stripe pattern defined by a Si3N4 mask. Single‐mode lasers of stripe width 3 and 6 μm are demonstrated that operate continuously at 300 K in the threshold current range of 10–25 mA and with single‐facet power levels as high as 10–20 mW.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Meehan, Professor Kathleen |
| Authors: | Meehan, K., Gavrilovic, P., Epler, J. E., Hsieh, K. C., Holonyak, N., Burnham, R. D., Thornton, R. L., and Streifer, W. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Journal of Applied Physics |
| Publisher: | American Institute of Physics |
| ISSN: | 0021-8979 |
| ISSN (Online): | 1089-7550 |
University Staff: Request a correction | Enlighten Editors: Update this record
Altmetric
Altmetric