Fabrication and characterisation of Transparent Gate High Electron Mobility Transistors (TGHEMT) using Indium Tin Oxide (ITO)

Khalid, A. H. , Basher, S. A. and Rezazadeh, A. A. (1994) Fabrication and characterisation of Transparent Gate High Electron Mobility Transistors (TGHEMT) using Indium Tin Oxide (ITO). In: EDMO 1994: 2nd International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, King's College, London, UK, Nov 1994,

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Abstract

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Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Khalid, Dr Ata-Ul-Habib
Authors: Khalid, A. H., Basher, S. A., and Rezazadeh, A. A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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